SEMICONDUCTORS
APT6030BN
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min
Typ Max Unit
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
VDSS
ID= 250 µA, VGS= 0 V
600
-
-
-
-
4
V
V
VGS(th)
ID=1 mA, VDS= VGS
VDS= 600 V, VGS= 0 V
Tj= 25 °C
VDS= 0.8 VDSS, VGS= 0 V
Tj= 125 °C
VGS= 30 V, VDS= 0 V
VGS= 30 V
VDS >ID(on)xRDS(on)Max
0.5ID(Cont), VGS= 10 V
2
-
250
µA
IDSS
Zero Gate Voltage Drain Current
-
-
-
-
-
-
-
-
1
mA
nA
A
IGSS
Gate-Source leakage Current
On State Drain Current
100
23
ID(on)
RDS(on)
Drain-Source on Resistance
0.3
Ω
DYNAMIC CHARACTERISTICS
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Qg
Input Capacitance
-
-
-
-
-
-
-
2905 3500
VGS= 0 V, VDS= 25 V
f= 1MHz
Output Capacitance
Reverse transfer Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate Source Charge
Gate-Drain Charge
505
190
20
710
285
40
pF
ns
VDD= 300 V, VGS= 15 V
IDS= ID(Cont) @ 25°C
RGS= 1.8 Ω
35
70
90
50
140
18
130
100
210
27
VDD= 300 V, VGS= 10 V
IDS= ID(Cont) @ 25°C
Qgs
Qgd
nC
75
110
22/10/2012
COMSET SEMICONDUCTORS
2/4
COMSET [ COMSET SEMICONDUCTOR ]
