PNP 2N4030 – 2N4031 – 2N4032 – 2N4033
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
Min
30
75
40
100
25
70
15
10
40
25
15
40
100
150
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
120
300
-
Unit
-I
C
= 100 µA, -V
CE
= 5 V
-I
C
= 100 mA, -V
CE
= 5V
h
FE
(*)
DC Current Gain
-I
C
= 500 mA, -V
CE
= 5V
-
-
-
-
-
-
-
-
400
MH
Z
500
110
20
350
50
100
pF
pF
ns
ns
ns
-I
C
= 1 A, -V
CE
= 5 V
-I
C
= 100 mA, -V
CE
= 5V
T
amb
= -55°c
f
T
Transition
Frequency
Emitter – base
Capacitance
Collector – base
Capacitance
Storage times
Fall times
Turn-on times
-I
C
= 50 mA, -V
CE
= 10 V
f = 100 MH
Z
I
C
= 0, -V
EB
= 0.5 V
f = 1 MH
Z
I
E
= 0, -V
CB
= 10V
f = 1 MH
Z
-I
C
=500 mA, -V
CC
= 30V
-I
B1
= -I
B1
= 50 mA
-I
C
=500 mA, -V
CC
= 30V
-I
B1
= -I
B1
= 50 mA
-I
C
=500 mA, -V
CC
= 30V
-I
B1
= -I
B1
= 50 mA
C
EBO
C
CBO
t
S
t
f
t
on
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
17/10/2012
COMSET SEMICONDUCTORS
3/4
COMSET [ COMSET SEMICONDUCTOR ]
