PNP 2N4030 – 2N4031 – 2N4032 – 2N4033
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
= 0, V
CB
= 50 V
I
E
= 0, V
CB
= 60 V
V
CB
=50 V
I
E
= 0 ; V
T
amb
= 150°C V
CB
=60 V
I
E
= 0, V
CB
= 50 V
I
E
= 0, V
CB
= 60 V
V
CB
=50 V
I
E
= 0
T
amb
= 150°C V
CB
=60 V
2N4030
2N4031
2N4030
2N4031
2N4032
2N4033
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
2N4030
2N4031
2N4032
2N4033
Min
-
-
-
-
60
80
60
80
60
80
60
80
5
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
50
50
50
50
-
-
-
-
-
-
-
-
-
0.15
0.5
1
0.9
1.1
1.2
Unit
nA
µA
nA
µA
-I
CBO
Collector Cutoff
Current
-V
CB0
Collector – Base
-I
C
= 10 µA
Breakdown Voltage I
E
= 0
V
-V
CE0
(*)
Collector – Emitter -I
C
= 10 mA
Breakdown Voltage I
B
= 0
V
-V
EB0
Emitter – Base
-I
E
= 10 µA
Breakdown Voltage I
C
= 0
-I
C
= 150 mA, -I
B
= 15 mA
-I
C
= 500 mA, -I
B
= 50 mA
-I
C
= 1 A, -I
B
= 100 mA
-I
C
= 150 mA, -I
B
= 15 mA
-I
C
= 500 mA, -I
B
= 50 mA
-I
C
= 1 A, -I
B
= 100 mA
V
-V
CE(SAT)
(*)
Collector-Emitter
Saturation Voltage
2N4030
2N4032
-
-
-
V
-V
BE
(*)
Base-Emitter
Saturation Voltage
2N4030
2N4032
-
17/10/2012
COMSET SEMICONDUCTORS
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