PNP 2N3636 – 2N3637
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
2N3636
I
C
= -0.1 mA
V
CE
= -10 V
2N3637
2N3636
I
C
= -1 mA
V
CE
= -10 V
2N3637
2N3636
I
C
= -10 mA
V
CE
= -10 V
2N3637
2N3636
I
C
= -50 mA
V
CE
= -10 V
2N3637
2N3636
I
C
= -150 mA
V
CE
= -10 V
2N3637
I
C
= -10 mA, I
B
= -1 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -10 mA, I
B
= -1 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -30 mA, V
CE
= -30 V 2N3636
f = 100 MHz
2N3637
I
E
= 0, V
CB
= -20 V, f = 100 kHz
I
C
= 0, V
EB
= -1 V, f = 100 kHz
Min
40
80
45
90
50
100
50
100
25
50
-
-
-
-
150
200
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
-
150
300
-
-
0.3
0.5
0.8
0.9
-
-
10
75
Unit
h
FE
DC Current Gain (*)
-
V
CE(SAT)
V
BE(SAT)
f
T
C
ob
C
ib
Collector-Emitter
saturation Voltage
(*)
Base-Emitter
saturation Voltage
(*)
Transition frequency
Output Capacitance
Input Capacitance
V
V
MHz
pF
PF
SWITCHING TIMES
Symbol
t
on
t
off
Turn-on time
Turn-off time
Ratings
I
C
= -50 mA, I
B1
= -I
B2
= -5 mA
V
CC
= 100 V, C
BE
= 4 V
Value
400
600
Unit
ns
(*) Pulse conditions : tp < 300
µs, δ
=1.5%
21/09/2012
COMSET SEMICONDUCTORS
2/3
COMSET [ COMSET SEMICONDUCTOR ]
