PNP 2N3636 – 2N3637
SILICON PLANAR RF TRANSISTORS
The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case.
They are intended for high voltage switching and Low Power Amplifier.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
Ratings
Collector-Emitter Voltage (I
b
= 0)
Collector-Base Voltage (I
e
= 0)
Emitter-Base Voltage (I
c
= 0)
Collector Current
T
amb
= 25°C
Value
-175
-175
-5
-1
1
Unit
V
V
V
A
P
D
Total Power Dissipation
T
case
= 25°C
5
200
-65 to +200
-65 to +150
W
T
J
T
Stg
T
amb
Junction Temperature
°C
°C
°C
Storage Temperature Range
Operating Ambient Temperature
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
V
CEO
V
CBO
V
EBO
Ratings
Collector Cutoff
Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
(*)
Collector Base
Breakdown Voltage
Emitter Base
Breakdown Voltage
Test Condition(s)
V
CB
= -100 V, I
E
=0
V
EB
= -3 V, I
C
=0
I
C
= -10 mA, I
B
=0
I
C
= -100 µA, I
E
=0
I
E
= -10 mA, I
C
=0
COMSET SEMICONDUCTORS
Min
-
-
-175
-175
-5
Typ
-
-
-
-
-
Max
-100
-50
-
-
-
Unit
nA
nA
V
V
V
1/3
21/09/2012
COMSET [ COMSET SEMICONDUCTOR ]
