NPN 2N3583 – 2N3584 – 2N3585
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CEO
Ratings
Test Condition(s)
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3583
2N3584
2N3585
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3584
2N3585
2N3584
2N3585
2N3584
2N3585
Min
-
-
-
Typ
-
-
-
Max
10
5
5
1
Unit
Collector-Emitter cut-
I
B
= 0 ; V
CE
= 150 V
off current
V
BE
= -1.5V ; V
CE
= 225 V
V
BE
= -1.5V ; V
CE
= 340 V
V
BE
= -1.5V ; V
CE
= 450 V
V
BE
= -1.5V ; V
CE
= 225 V
T
j
= 150°C
V
BE
= -1.5V ; V
CE
= 300 V
T
j
= 150°C
I
CEX
Collector-Emitter
cut-off current
mA
-
-
-
-
175
250
300
-
-
-
-
40
10
25
25
8
8
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
5
0.5
0.5
-
-
-
5
0.75
0.75
1.4
200
-
100
100
80
80
-
mA
I
EBO
Emitter cut-offcurrent I
C
= 0 ; V
EB
= 6 V
Collector-Emitter
sustaning Voltage (*)
V
CEO(SUS)
I
B
= 0 ; I
C
= 200 mA
V
V
CE(SAT)
Collector-Emitter
I = 1 A ; I
B
= 125 mA
saturation Voltage (*)
C
Base-Emitter
I = 1 A ; I
B
= 100 mA
saturation Voltage (*)
C
V
CE
= 10 V ; I
C
= 500 mA
V
V
BE(SAT)
h
FE
DC Current Gain (*)
V
CE
= 10 V ; I
C
= 1 A
V
CE
= 2 V ; I
C
= 1 A
I
S/B
Second Breakdown
Collector current
Transition frequency
Turn-on-time
Fall time
Carrier storage time
V
CE
= 100 V ; t = 1 s
V
CE
= 10 V ; I
C
= 200 mA
f = 5 MHz
I
C
= 1 A ; I
B
= 100 mA
I
C
= 1 A ; I
B
= 100 mA
I
C
= 1 A ; I
B
= 100 mA
f
T
t
d
+t
r
t
f
t
s
10
-
-
-
-
-
-
-
-
3
3
4
MHz
µs
(*)
Measured under pulse conditions :
t
P
<300µs,
δ
<2%.
17/10/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
