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2N3583_12 参数 Datasheet PDF下载

2N3583_12图片预览
型号: 2N3583_12
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管。 [NPN SILICON POWER TRANSISTORS.]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 102 K
品牌: COMSET [ COMSET SEMICONDUCTOR ]
 浏览型号2N3583_12的Datasheet PDF文件第2页浏览型号2N3583_12的Datasheet PDF文件第3页  
NPN 2N3583 – 2N3584 – 2N3585
NPN SILICON POWER TRANSISTORS.
The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case.
They are designed for high-speed switching and linear amplifier application for high-voltage
operational amplifiers, switching regulators, converters,deflection stages and high fidelity
amplifiers.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Ratings
Collector-Base Voltage (I
E
= 0)
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
2N3583
2N3584
2N3585
Value
250
330
440
175
250
300
6
1
2
2
5
1
35
200
-65 to +200
Unit
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
J
T
Stg
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Peak Collector
t
p
= 10ms
Current
Base current
Total power
@ T
mb
= 70°C
Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to ambient in free air
Value
5
Unit
°C/W
87.5
17/10/2012
COMSET SEMICONDUCTORS
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