2N2327 thur 2N2329
ELECTRICAL CHARACTERISTICS
(*)
T
J
=25°C unless otherwise noted, R
GK
=1000Ω
Symbol
V
DRM
I
RRM
I
DRM
Ratings
Peak Forward Blocking Voltage
Min :
(1)
Peak Reverse Blocking Current
(Rated V
DRM,
T
J
=125°C)
Peak Forward Blocking Current
(Rated V
DRM,
T
J
=125°C)
Forward « on » Voltage
I
T
=1.0 A Peak
I
T
=1.0 A Peak
T
C
=85°C
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc, R
L
=100Ω
Anode Voltage=6.0 Vdc, R
L
=100Ω
T
C
=-65°C
Gate Trigger Voltage
Anode Voltage=6.0 V, R
L
=100Ω
Anode Voltage=6.0 V, R
L
=100Ω
T
C
=-65°C
V
DRM
= Rated, R
L
=100Ω
T
J
=125°C
Holding Current
Anode Voltage=6.0 V
Anode Voltage=6.0 V
T
C
=-65°C
Anode Voltage=6.0 V
T
C
=125°C
2N2327
250
2N2328
300
Max : 100
Max : 100
Max : 1.5
2N2329
400
Unit
V
µA
µA
V
T
V
Max : 2.0
Max : 200
µA
Max : 350
Max : 0.8
Max : 1.0
Min : 0.1
Max : 2.0
Max : 3.0
Min : 0.15
mA
V
I
GT
V
GT
I
H
(*) JEDEC Registered Values
(1) V
RSM
and V
DRM
can be applied for all types on a continuous dc basis without incurring damage.
(2) R
GK
current is not included in measurement.
12/11/2012
COMSET SEMICONDUCTORS
2|3
COMSET [ COMSET SEMICONDUCTOR ]
