2N2327 thur 2N2329
SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal
or detection circuits
Compliance to RoHS
.
MAXIMUM RATINGS (*)
T
J
=125°C unless otherwise noted, R
GK
=1000Ω
Symbol
V
RSM(REP)
V
RSM(NON-
REP)
Ratings
Peak reverse blocking voltage (1)
Non-repetitive peak blocking reverse
voltage (t<5.0 ms)
Forward Current RMS
(all conduction angles)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal Equilibrium
is Restored.
Peak Gate Power – Forward
Average Gate Power - Forward
Peak Gate Current – Forward
Peak Gate Voltage - Forward
Peak Gate Voltage - Reverse
Operating Junction Temperature Range
Storage Temperature Range
2N2327
250
350
2N2328
300
400
1.6
2N2329
400
500
Unit
V
V
A
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
GFM
V
GRM
T
J
T
STG
15
0.1
0.01
0.1
A
W
W
A
6.0
6.0
-65 to +125
-65 to +150
V
V
°C
12/11/2012
COMSET SEMICONDUCTORS
1|3
COMSET [ COMSET SEMICONDUCTOR ]
