NPN 2N2221 – 2N2221A
2N2222 – 2N2222A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CE(SAT)
Ratings
Test Condition(s)
Min Typ Mx Unit
-
-
-
-
-
0.6
-
-
250
300
30
50
50
75
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.4
0.3
1.6
1
1.3
1.2
2.6
2
-
-
150
300
300
375
10
25
225
60
150
V
V
BE(SAT)
f
T
h
fe
t
d
t
r
t
s
t
f
r
b
,C
C
2N2221-2N2222
2N2221A-2N2222A
2N2221-2N2222
2N2221A-2N2222A
2N2221-2N2222
I
C
=150 mA, I
B
=15 mA
Base-Emitter
2N2221A-2N2222A
saturation Voltage
2N2221-2N2222
(*)
I
C
=500 mA, I
B
=50 mA
2N2221A-2N2222A
2N2221-2N22218A
Transition
I
C
=20 mA, V
CE
=20 V
2N2222
f= 100MHz
frequency
2N2222A
2N2221A
I
C
=1 mA, V
CE
=10 V
f= 1kHz
2N2222A
Small signal
current gain
2N2221A
I
C
=10 mA, V
CE
=10 V
f= 1kHz
2N2222A
I
C
=150 mA, I
B
=15 mA 2N2221A
Delay time
-V
BB
=0.5 V, V
CC
=30 V 2N2222A
I
C
=150 mA, I
B
=15 mA 2N2221A
Rise time
-V
BB
=0.5 V, V
CC
=30 V 2N2222A
I
C
=150 mA, V
CC
=30 V 2N2221A
Storage time
I
B1
= -I
B2
=15 mA
2N2222A
I
C
=150 mA, V
CC
=30 V 2N2221A
Fall time
I
B1
= -I
B2
=15 mA
2N2222A
2N2221A
Feedback time
I
C
=20 mA, V
CE
=20 V
constant
f= 31.8MHz
2N2212A
I
C
=150 mA, I
B
=15 mA
Collector-Emitter
saturation Voltage
(*)
I
C
=500 mA, I
B
=50 mA
V
MHz
-
ns
ns
ns
ns
ps
(*) Pulse conditions : tp < 300
µs, δ
=2%
16/10/2012
COMSET SEMICONDUCTORS
3|4
COMSET [ COMSET SEMICONDUCTOR ]
