NPN 2N2221 – 2N2221A
2N2222 – 2N2222A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CBO
Ratings
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Cutoff
Current
Collector Emitter
Breakdown
Voltage (*)
Collector Base
Breakdown
Voltage
Emitter Base
Breakdown
Voltage
V
CB
= 50 V
I
E
= 0
V
CB
= 60 V
I
E
= 0
Test Condition(s)
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
2N2221-2N2222
2N2221-2N2222
2N2221A-2N2222A
2N2221A-2N2222A
2N2221-2N2222
2N2221A-2N2222A
2N2221A-2N2222A
2N2221-2N2222
2N2221A-2N2222A
2N2221-2N2222
I
C
= 10 µA, I
E
= 0
2N2221A-2N2222A
2N2221-2N2222
2N2221A-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221A
2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221
2N2221A
2N2222
2N2222A
Min Typ Mx Unit
-
-
-
-
-
-
30
40
60
75
5
6
20
35
25
50
35
75
15
35
20
50
40
100
20
25
30
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
10
10
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
120
300
-
-
V
nA
µA
nA
µA
nA
nA
V
I
EBO
I
CEX
V
CEO
V
BE
= 3.0 V, I
C
=0
V
CE
= 60 V, -V
BE
= 3V
I
C
= 10 mA, I
B
= 0
V
CBO
V
EBO
I
E
= 10 µA, I
C
= 0
I
C
=0.1 mA, V
CE
=10 V
I
C
=1 mA, V
CE
=10 V
I
C
=10 mA, V
CE
=10 V
V
h
FE
DC Current Gain
(*)
I
C
=10 mA, V
CE
=10 V
T
amb
= -55°C
I
C
=150 mA, V
CE
=1 V
I
C
=150 mA, V
CE
=10 V
I
C
=500 mA, V
CE
=10 V
-
16/10/2012
COMSET SEMICONDUCTORS
2|4
COMSET [ COMSET SEMICONDUCTOR ]
