General Purpose Transistor
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0)
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
COMCHIP
www.comchiptech.com
Symbol
V(BR)CEO
Min
–40
Max
—
Unit
Vdc
Vdc
V(BR)CBO
–40
V(BR)EBO
–5.0
IBL
—
ICEX
—
–50
—
Vdc
—
nAdc
–50
nAdc
REM : Thermal Clad is a trademark of the Bergquist Company.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTICS(3)
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Symbol
HFE
Min
60
80
100
60
30
Max
—
—
300
—
—
Unit
—
VCE(sat)
—
—
VBE(sat)
–0.65
—
–0.85
–0.95
Vdc
–0.25
–0.4
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Small – Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = –100
m
Adc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
fT
250
Cobo
—
Cibo
—
hie
2.0
hre
0.1
hfe
100
hoe
3.0
NF
—
4.0
MHz
—
pF
4.5
pF
10
kΩ
12
X 10– 4
10
—
400
m
mhos
60
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc,
IC = –10 mAdc, IB1 = –1.0 mAdc)
(VCC = –3.0 Vdc, IC = –10 mAdc,
IB1 = IB2 = –1.0 mAdc)
td
tr
ts
tf
—
—
—
—
35
ns
35
225
ns
75
3.Pulse Test: Pulse Width ı 300 ıs, Duty Cycle ı 2.0%.
MDS0306002A
Page 2
COMCHIP [ COMCHIP TECHNOLOGY ]
