General Purpose Transistor (PNP)
COMCHIP
www.comchiptech.com
MMBT3906
PNP Silicon Type
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
SOT-23
.119 (3.0)
.110 (2.8)
.020 (0.5)
Top View
.056 (1.40)
.047 (1.20
)
3
1
COLLECTOR
2
.006 (0.15)max.
.006 (0.15)
.002 (0.05)
3
1
BASE
.037(0.95) .037(0.95)
2
EMITTER
.020 (0.5)
.020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
–40
–40
–5.0
–200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
MDS0306002A
.044 (1.10)
.035 (0.90)
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