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MMBT2222ALT1G 参数 Datasheet PDF下载

MMBT2222ALT1G图片预览
型号: MMBT2222ALT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管NPN硅 [General Purpose Transistors NPN Silicon]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 86 K
品牌: COMCHIP [ COMCHIP TECHNOLOGY ]
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MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
SMALL− SIGNAL CHARACTERISTICS
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
Noise Figure
(I
C
= 100
mAdc,
V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
BE(off)
= − 0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
d
t
r
t
s
t
f
10
25
225
ns
60
ns
rb, C
c
MMBT2222A
NF
MMBT2222A
4.0
150
dB
ps
Symbol
Min
Max
Unit
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+16 V
0
−2 V
1.0 to 100
ms,
DUTY CYCLE
2.0%
1 kW
200
+16 V
0
< 2 ns
C
S
* < 10 pF
−14 V
< 20 ns
1.0 to 100
ms,
DUTY CYCLE
2.0%
1k
1N914
+30 V
200
C
S
* < 10 pF
−4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
500
hFE , DC CURRENT GAIN
300
200
100
70
50
30
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
T
J
= 125°C
25°C
−55°C
V
CE
= 1.0 V
V
CE
= 10 V
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
Figure 3. DC Current Gain
http://onsemi.com
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