MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
MMBT2222LT1
MMBT2222ALT1
Collector −Base Voltage
MMBT2222LT1
MMBT2222ALT1
Emitter −Base Voltage
MMBT2222LT1
MMBT2222ALT1
Collector Current − Continuous
I
C
V
EBO
5.0
6.0
600
mAdc
1
V
CBO
60
75
Vdc
Symbol
V
CEO
30
40
Vdc
Value
Unit
Vdc
1
BASE
2
EMITTER
3
2
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
1
xxx M
G
G
556
mW
mW/°C
°C/W
Max
Unit
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
xxx = 1P or M1B
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 6
Publication Order Number:
MMBT2222LT1/D
COMCHIP [ COMCHIP TECHNOLOGY ]
