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CPC3703C 参数 Datasheet PDF下载

CPC3703C图片预览
型号: CPC3703C
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS场效应管 [N-Channel Depletion-Mode Vertical DMOS FETs]
分类和应用:
文件页数/大小: 4 页 / 98 K
品牌: CLARE [ CLARE ]
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CPC3703  
Absolute Maximum Ratings  
Absolute Maximum Ratings are stress ratings. Stresses in  
excess of these ratings can cause permanent damage to  
the device. Functional operation of the device at conditions  
beyond those indicated in the operational sections of this  
data sheet is not implied.  
Parameter  
Ratings  
250  
Units  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Total Package Dissipation 1  
Operational Temperature  
Storage Temperature  
20  
V
1.6  
W
-55 to +125  
-55 to +125  
ºC  
ºC  
1 Mounted on 1"x1" FR4 board.  
Thermal Characteristics  
Package  
ID (continuous) ID (pulsed)  
Power Dissipation  
θjc  
ºC/W  
15  
IDR  
IDRM  
@TA=25ºC  
SOT-89  
360mA  
600mA  
1.6W  
360mA  
600mA  
Electrical Characteristics  
Parameter  
Symbol  
BVDSX  
Conditions  
VGS= -5V, ID=100µA  
Min  
250  
Typ  
-
Max Units  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Off Voltage  
Change in VGS(off) with Temperature  
Gate Body Leakage Current  
-
-3.9  
4.5  
100  
1
V
VGS(off)  
VDS= 15V, ID=1mA  
-1.6  
-
V
dVGS(off) /dT  
IGSS  
VDS= 15V, ID=1mA  
-
-
mV/ºC  
nA  
VGS= 20V, VDS=0V  
-
-
VGS= -5V, VDS=Max Rating  
-
-
µA  
Drain-to-Source Leakage Current  
ID(off)  
VGS= -5V, VDS=200V, T =125ºC  
-
300  
-
-
-
1
mA  
mA  
Ω
A
Saturated Drain-to-Source Current  
Static Drain-to-Source On-State Resistance  
Change in RDS(on) with Temperature  
Forward Transconductance  
IDSS  
RDS(on)  
dRDS(on) /dT  
GFS  
VGS= 0V, VDS=15V  
-
-
4
VGS= 0V, ID=200mA  
-
-
1.1  
-
%/ºC  
Ω
ID= 100mA, VDS = 10V  
VGS= -5V  
225  
-
m
Input Capacitance  
CISS  
327  
51  
27  
350  
65  
35  
Common Source Output Capacitance  
Reverse Transfer Capacitance  
COSS  
VDS= 25V  
-
pF  
CRSS  
f= 1MHz  
Turn-ON Delay Time  
Rise Time  
td(on)  
tr  
td(off)  
tf  
VDD= 25V  
23  
8
35  
20  
25  
ID= 150mA  
-
-
ns  
V
Turn-OFF Delay Time  
Fall Time  
17  
70  
VGS= 0V to -10V  
80  
RGEN= 50Ω  
VGS= -5V, ISD=150mA  
Source-Drain Diode Voltage Drop  
VSD  
0.6  
1.8  
VDD  
Switching Waveform & Test Circuit  
RL  
0V  
90%  
PULSE  
GENERATOR  
INPUT  
OUTPUT  
10%  
-10V  
Rgen  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
tr  
tF  
D.U.T.  
VDD  
0V  
INPUT  
10%  
10%  
OUTPUT  
90%  
90%  
R03  
2
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