CPC3703
N-Channel Depletion-Mode
Vertical DMOS FETs
Description
BVDSX
BVDGX
250V
/
RDS(ON)
(max)
4Ω
IDSS (min)
Package
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high-power applications. The CPC3703
is a highly reliable FET device that has been used
extensively in Clare’s Solid State Relays for industrial
and telecommunications applications.
360mA
SOT-89
Features
• Depletion mode device offers low RDS(ON) at cold
temperatures
• Low on resistance 4 ohms max. at 25ºC
• High input impedance
• High breakdown voltage 250V
• Low VGS(off) voltage -1.6 to -3.9V
• Small package size SOT89
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4Ω maximum, on-state
resistance at 25ºC.
Applications
• Ignition Modules
• Normally-on Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703C
Description
SOT89 (100/Tube)
CPC3703CTR
SOT89 (2000/Reel)
Package Pinout
Circuit Symbol
D
D
S
G
D
S
G
(SOT89)
RoHS
2002/95/EC
Pb
e3
DS-CPC3703-R03
1
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