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CS5166HGDW16 参数 Datasheet PDF下载

CS5166HGDW16图片预览
型号: CS5166HGDW16
PDF下载: 下载PDF文件 查看货源
内容描述: 5位同步CPU控制器与电源就绪和电流限制 [5-Bit Synchronous CPU Controller with Power-Good and Current Limit]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管
文件页数/大小: 22 页 / 441 K
品牌: CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
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Application Information: continued  
Figure 17 shows the relationship between the regulated  
Selecting External Components  
output voltage VFB and the Power-Good signal. To prevent  
Power-Good from interrupting the CPU unnecessarily, the  
CS5166H has a built-in delay to prevent noise at the VFB  
pin from toggling Power-Good. The internal time delay is  
designed to take about 75µs for Power-Good to go low and  
65µs for it to recover. This allows the Power-Good signal to  
be completely insensitive to out of regulation conditions  
that are present for a duration less than the built in delay  
(see Figure 18).  
The CS5166H buck regulator can be used with a wide  
range of external power components to optimize the cost  
and performance of a particular design. The following  
information can be used as general guidelines to assist in  
their selection.  
NFET Power Transistors  
Both logic level and standard FETs can be used. The refer-  
ence designs derive gate drive from the 12V supply which  
is generally available in most computer systems and utilize  
logic level FETs. A charge pump may be easily implement-  
ed to permit use of standard FET’s or support 5V or 12V  
only systems (maximum of 20V). Multiple FET’s may be  
paralleled to reduce losses and improve efficiency and  
thermal management.  
It is therefore required that the output voltage attains an  
out of regulation or in regulation level for at least the built-  
in delay time duration before the Power-Good signal can  
change state.  
Voltage applied to the FET gates depends on the applica-  
tion circuit used. Both upper and lower gate driver outputs  
are specified to drive to within 1.5V of ground when in the  
low state and to within 2V of their respective bias supplies  
when in the high state. In practice, the FET gates will be  
driven rail to rail due to overshoot caused by the capacitive  
load they present to the controller IC. For the typical appli-  
cation where VCC = 12V and 5V is used as the source for  
the regulator output current, the following gate drive is  
provided:  
VGS (TOP) = 12V - 5V = 7V, VGS(BOTTOM) = 12V,  
(see Figure 20).  
Trace 1 PWRGD (2V/div)  
Trace 4 V (1V/div)  
FB  
Figure 18: Power-Good is insensitive to out of regulation conditions that  
are present for a duration less than the built in delay.  
External Output Enable Circuit  
On/off control of the regulator can be implemented  
through the addition of two additional discrete compo-  
nents (see Figure 19). This circuit operates by pulling the  
Soft Start pin high, and the ISENSE pin low, emulating a cur-  
rent limit condition.  
5V  
Trace 3 = GATE(H) (10V/div.)  
Trace 1= GATE(H) - 5V  
IN  
Trace 4 =  
(10V/div.)  
GATE(L)  
MMUN2111T1 (SOT-23)  
Trace 2 = Inductor Switching Node (5V/div.)  
5
Figure 20: Gate drive waveforms depicting rail to rail swing.  
SS  
CS5166H  
8
I
SENSE  
IN4148  
Shutdown  
Input  
Figure 19: Implementing shutdown with the CS5166H.  
12