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2N7002PT 参数 Datasheet PDF下载

2N7002PT图片预览
型号: 2N7002PT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 135 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
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RATING CHARACTERISTIC CURVES ( 2N7002PT )
Typical Electrical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation
with Temperature
1.1
Figure 8. Body Diode Forward Voltage
Variation with Drain Current
2
1
DRAIN-SOURCE BREAKDO
WN VOLTAGE
I
D
= 250µA
I
S
, REVERSE DRAIN CURRENT (A)
1.075
1.05
1.025
1
0.975
0.95
0.925
-50
V
GS
= 0 V
BV
DSS
, NORMALIZED
0 .5
TJ = 1 2 5 °C
0 .1
0 .0 5
25°C
-5 5 ° C
0 .0 1
0 .0 0 5
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150
0 .0 0 1
0 .2
0 .4
V
SD
0 .6
0 .8
1
1 .2
1 .4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Capacitance Characteristics
60
1.0
Figure 10. Gate Charge Characteristics
C iss
20
V
GS
, GATE-SOURCE VOLTAGE (V)
40
V
DS
= 3 0 V
.8
CAPACITANCE (pF)
10
.6
C oss
5
.4
2
f = 1 MH z
V
GS
= 0V
C rss
30
50
.2
I
D
= 2 5 0 m A
1
1
2
V
DS
3
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
0
0
0 .1
0 .2
0 .3
Q
g
, GATE CHARGE (nC)
0 .4
0.5
Figure 11.
Figure 12. Switching Waveforms
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
V
GS
10%
10%
90%
R
GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width