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2N7002PT 参数 Datasheet PDF下载

2N7002PT图片预览
型号: 2N7002PT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 135 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
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RATING CHARACTERISTIC CURVES ( 2N7002PT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
2 .5
6
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
V
GS
=4.0V
4 .5
V
GS
= 10V
I
D
, DRAIN-SOURCE CURRENT (A)
2
9.0
8.0
7.0
6.0
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5
5 .0
6 .0
1 .5
4
7 .0
3
1
5.0
8 .0
9 .0
10
0 .5
4.0
3.0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
5
2
0
1
0
0 .4
0 .8
1 .2
I
D
, DRA IN CURRENT (A)
1 .6
2
Figure 3. On-Resistance Variation
with Temperature
6.0
Figure 4. On-Resistance Variation with Drain
Current and Temperature
6
V
GS
= 10V
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
DRAIN-SOURCE ON-RESISTANCE
5
5.0
I
D
= 250m A
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
T
J
= 1 2 5 °C
4
4.0
3.0
3
25°C
2
2.0
-55°C
1
1.0
0
-5 0
-2 5
0
25
50
75
100
T , JUNCTION T EMPERATURE (°C)
J
125
150
0
0
0 .4
0 .8
1 .2
I
D
, DRAIN CURRENT (A)
1 .6
2
Figure 5. Transfer Characteristics
2
1 .1
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
Figure 6. Gate Threshold Variation with
Temperature
V
DS
= V
GS
I
D
= 1 mA
V
DS
= 10V
1.6
I
D
, DRAIN CURRENT (A)
T J = -55°C
25°C
125°C
1 .0 5
1
1.2
0 .9 5
0.8
0 .9
0.4
0 .8 5
0
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
0 .8
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150