RATING CHARACTERISTIC CURVES ( 2N7002DSPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V
50
V
1
µA
mA
TC=125°C
0.5
100
-100
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
nA
nA
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
1.9
2.5
V
1
VGS = 10 V, I
A
2
D = 510 m
RDS(ON)
Static Drain-Source On-Resistance
Ω
VGS = 4.5 V, ID = 350 mA
1.6
4.0
1500
On-State Drain Current
10V
ID(ON)
VGS = 10 V, VDS
=
mA
mS
gFS
400
Forward Transconductance
VDS =
10 V
, ID = 510 mA
DYNAMIC CHARACTERISTICS
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
1
VDS = 25 V, VGS = 10 V,
ID= 510 mA
nC
pF
Qgs
Qgd
0.19
0.33
20
Ciss
Coss
Crss
ton
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
13
Output Capacitance
Reverse Transfer Capacitance
5
Turn-On Time
VDD
20
20
20
20
nS
nS
= 25V
6
6
ID = 250 mA, VGS = 10 V,
tr
RGEN = 25
Ω
toff
tf
Turn-Off Time
VDD = 25 V,
ID = 250 mA, VGS = 10 V,
11
5
RGEN = 25
Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
510
1.5
mA
A
ISM
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 200 mA (Note 1)
1.2
V
0.8
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
