RATING CHARACTERISTIC CURVES ( 2N7002DSPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 40 V, V
GS
= 0 V
T
C
=125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
50
1
0.5
100
-100
V
µA
mA
nA
nA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 1)
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 510 m A
V
GS
= 4.5 V, I
D
= 350 mA
1
1.9
1
1.6
2.5
2
V
Ω
4.0
mA
400
mS
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 10V
V
DS
= 10 V , I
D
= 510 mA
1500
DYNAMIC CHARACTERISTICS
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V
DS
= 25 V, V
GS
= 10 V,
I
D
= 510 mA
1
0.19
0.33
20
13
5
nC
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
pF
V
DD
= 25V
I
D
= 250 mA, V
GS
= 10 V,
R
GEN
= 25
Ω
V
DD
= 25 V,
I
D
= 250 mA, V
GS
= 10 V,
R
GEN
= 25
Ω
6
6
11
5
20
20
20
20
nS
Turn-Off Time
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 200 mA
(Note 1)
0.8
510
1.5
1.2
mA
A
V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
