CEP6426/CEB6426
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 8A
1
3
V
mΩ
mΩ
S
45
65
7
66
85
VGS = 4.5V, ID = 6.4A
VDS = 10V, ID = 4.5A
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
680
80
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
45
td(on)
tr
td(off)
tf
10
2.9
20
5.8
59.4
5
ns
ns
VDD = 30V, ID = 1A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
29.7
2.5
ns
ns
Total Gate Charge
Qg
12.9
1.6
17.1
nC
nC
nC
VDS = 30V, ID = 4.5A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
2.5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
17
A
V
VSD
VGS = 0V, IS = 8A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2