CEP6426/CEB6426
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 17A , RDS(ON) = 66mΩ @VGS = 10V.
RDS(ON) = 85mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
60
Gate-Source Voltage
±20
17
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
68
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
35
W
PD
0.29
-55 to 150
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
3.5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 1. 2007.Dec
http://www.cetsemi.com
1