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CEH2310 参数 Datasheet PDF下载

CEH2310图片预览
型号: CEH2310
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 107 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEH2310的Datasheet PDF文件第1页  
CEH2310  
Electrical Characteristics TA = 25 C unless otherwise noted  
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current  
On Characteristics  
BVDSS  
IDSS  
VGS = 0V, ID = 250µA  
VDS = 30V, VGS = 0V  
VGS = ±12V, VDS = 0V  
30  
V
1
µA  
nA  
IGSS  
±100  
Gate Threshold Voltage  
VGS(th)  
RDS(on)  
VGS = VDS, ID = 250µA  
VGS = 10V, ID = 5.8A  
VGS = 4.5V, ID = 5.0A  
VGS = 2.5V, ID = 2.0A  
0.7  
1.4  
33  
38  
55  
V
27  
30  
40  
mΩ  
mΩ  
mΩ  
Static Drain-Source  
On-Resistance  
Dynamic Characteristics d  
Forward Transconductance  
Input Capacitance  
gFS  
Ciss  
Coss  
Crss  
VDS = 5V, ID = 5.0A  
5
S
8
830  
110  
85  
pF  
pF  
pF  
VDS = 15V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics d  
Turn-On Delay Time  
Turn-On Rise Time  
td(on)  
tr  
td(off)  
tf  
4
6
10  
15  
50  
10  
13  
ns  
ns  
VDD = 15V, ID = 5.8A,  
VGS = 10V, RGEN = 3Ω  
Turn-Off Delay Time  
Turn-Off Fall Time  
28  
4
ns  
ns  
Total Gate Charge  
Qg  
10  
1.8  
3.3  
nC  
nC  
nC  
VDS = 15V, ID = 5.8A,  
VGS = 4.5V  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
Drain-Source Diode Characteristics and Maximun Ratings  
Drain-Source Diode Forward Current b  
Drain-Source Diode Forward Voltage c  
IS  
3.0  
1.0  
A
V
VSD  
VGS = 0V, IS = 1.0A  
Notes :  
a.Repetitive Rating : Pulse width limited by maximum junction temperature.  
b.Surface Mounted on FR4 Board, t < 5 sec.  
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.  
d.Guaranteed by design, not subject to production testing.  
2