CEH2310
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
30
V
1
µA
nA
IGSS
±100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 2.0A
0.7
1.4
33
38
55
V
27
30
40
mΩ
mΩ
mΩ
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = 5V, ID = 5.0A
5
S
8
830
110
85
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
4
6
10
15
50
10
13
ns
ns
VDD = 15V, ID = 5.8A,
VGS = 10V, RGEN = 3Ω
Turn-Off Delay Time
Turn-Off Fall Time
28
4
ns
ns
Total Gate Charge
Qg
10
1.8
3.3
nC
nC
nC
VDS = 15V, ID = 5.8A,
VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
3.0
1.0
A
V
VSD
VGS = 0V, IS = 1.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CET [ CHINO-EXCEL TECHNOLOGY ]
