CEH2310
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V.
RDS(ON) = 38mΩ @VGS = 4.5V.
RDS(ON) = 55mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON)
.
D(1,2,5,6,)
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
G(3)
3
2
1
S(4)
TSOP-6
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
VDS
VGS
ID
Limit
Units
Drain-Source Voltage
30
±12
6.2
25
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
IDM
Maximum Power Dissipation
PD
2.0
W
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
62.5
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 1. 2006.April
http://www.cetsemi.com
1
CET [ CHINO-EXCEL TECHNOLOGY ]
