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CEH2310 参数 Datasheet PDF下载

CEH2310图片预览
型号: CEH2310
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 107 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEH2310的Datasheet PDF文件第2页  
CEH2310  
PRELIMINARY  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
30V, 6.2A , RDS(ON) = 33m@VGS = 10V.  
RDS(ON) = 38m@VGS = 4.5V.  
RDS(ON) = 55m@VGS = 2.5V.  
High dense cell design for extremely low RDS(ON)  
.
D(1,2,5,6,)  
Rugged and reliable.  
Lead free product is acquired.  
TSOP-6 package.  
4
5
6
G(3)  
3
2
1
S(4)  
TSOP-6  
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Units  
Drain-Source Voltage  
30  
±12  
6.2  
25  
V
V
A
A
Gate-Source Voltage  
Drain Current-Continuous  
Drain Current-Pulsed a  
IDM  
Maximum Power Dissipation  
PD  
2.0  
W
C
Operating and Store Temperature Range  
TJ,Tstg  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Limit  
Units  
Thermal Resistance, Junction-to-Ambient b  
RθJA  
62.5  
C/W  
This is preliminary information on a new product in development now .  
Details are subject to change without notice .  
Rev 1. 2006.April  
http://www.cetsemi.com  
1