CEDF634/CEUF634
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 250V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
250
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3.5A
2
4
V
mΩ
S
450
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 50V, ID = 5.1A
4.4
Ciss
Coss
Crss
925
95
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
20
td(on)
tr
td(off)
tf
16
3.5
38
4
32
7
ns
ns
VDD = 125V, ID = 5.6A,
VGS = 10V, RGEN = 12Ω
Turn-On Rise Time
Turn-Off Delay Time
76
8
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
18
3
23
nC
nC
nC
VDS = 200V, ID =5.6A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
6.7
1.5
A
V
VSD
VGS = 0V, IS = 6.7A
0.9
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.UIS condition Vdd=25V L=2mH Rg=25ohm Ias=6.7A.
2