CEDF634/CEUF634
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
250V, 6.7A, RDS(ON) = 450mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
250
Gate-Source Voltage
±20
6.7
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
26
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
46
W
PD
0.37
-55 to 150
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
2.7
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
Rev 2. 2010.June
http://www.cetsemi.com
Details are subject to change without notice .
1
CET [ CHINO-EXCEL TECHNOLOGY ]
