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UPA862TD-T3-A 参数 Datasheet PDF下载

UPA862TD-T3-A图片预览
型号: UPA862TD-T3-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频晶体管晶体管 [NPN SILICON RF TWIN TRANSISTOR]
分类和应用: 晶体晶体管射频光电二极管ISM频段放大器
文件页数/大小: 12 页 / 255 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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UPA862TD  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
Q2  
Q1  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
100  
10  
1
VCE = 1 V  
V
CE = 1 V  
10  
1
0.1  
0.01  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Base to Emitter Voltage, VBE (V)  
Base to Emitter Voltage, VBE (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
10  
1
100  
10  
1
VCE = 2 V  
V
CE = 2 V  
0.1  
0.01  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Base to Emitter Voltage, VBE (V)  
Base to Emitter Voltage, VBE (V)  
COLLECTOR CURRENT vs.  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
COLLECTOR TO EMITTER VOLTAGE  
40  
60  
50  
40  
30  
20  
10  
0
400 µa  
360 µa  
320 µa  
280 µa  
300 µa  
270 µa  
30  
20  
10  
240 µa  
240 µa  
240 µa  
200 µa  
160 µa  
180 µa  
150 µa  
120 µa  
90 µa  
120 µa  
80 µa  
60 µa  
IB  
= 40 µa  
I
B
= 30 µa  
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
Collector to Emitter Voltage, VCE (V)  
Collector to Emitter Voltage, VCE (V)  
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