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UPA862TD-T3-A 参数 Datasheet PDF下载

UPA862TD-T3-A图片预览
型号: UPA862TD-T3-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频晶体管晶体管 [NPN SILICON RF TWIN TRANSISTOR]
分类和应用: 晶体晶体管射频光电二极管ISM频段放大器
文件页数/大小: 12 页 / 255 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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UPA862TD  
ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)  
ORDERING INFORMATION  
SYMBOLS  
PARAMETERS  
UNITS  
RATINGS  
PART NUMBER  
QUANTITY  
PACKAGING  
Q1  
9
Q2  
9
UPA862TD-T3-A  
10K Pcs./Reel  
Tape & Reel  
VCBO  
VCEO  
VEBO  
IC  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
V
6
5.5  
1.5  
100  
192  
V
2
mA  
mW  
30  
180  
PT  
Total Power Dissipation1  
210 Total  
TJ  
Junction Temperature  
Storage Temperature  
°C  
°C  
150  
150  
TSTG  
-65 to +150  
Note: 1. Operation in excess of any one of these parameters may  
result in permanent damage.  
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
300  
Mounted on Glass Epoxy PCB  
(1.08 cm2 x 1.0 mm (t) )  
250  
210  
2 Elements in total  
200  
190  
180  
150  
Q2  
Q1  
100  
50  
0
25  
50  
75  
100  
125  
150  
Ambient Temperature, TA (°C)  
Q2  
Q1  
REVERSE TRANSFR CAPACITANCE vs.  
COLLECTOR TO BASE VOLTAGE  
REVERSE TRANSFR CAPACITANCE vs.  
COLLECTOR TO BASE VOLTAGE  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.0  
f = 1 MHz  
f = 1 MHz  
0.8  
0.6  
0.4  
0.2  
0
2
4
6
8
10  
2
4
6
8
10  
Collector to Base Voltage, VCB (V)  
Collector to Base Voltage, VCB (V)  
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