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NE85619-T1 参数 Datasheet PDF下载

NE85619-T1图片预览
型号: NE85619-T1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅高频三极管 [NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 26 页 / 828 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE85619-T1的Datasheet PDF文件第1页浏览型号NE85619-T1的Datasheet PDF文件第2页浏览型号NE85619-T1的Datasheet PDF文件第3页浏览型号NE85619-T1的Datasheet PDF文件第5页浏览型号NE85619-T1的Datasheet PDF文件第6页浏览型号NE85619-T1的Datasheet PDF文件第7页浏览型号NE85619-T1的Datasheet PDF文件第8页浏览型号NE85619-T1的Datasheet PDF文件第9页  
NE856 SERIES  
TYPICAL PERFORMANCE CURVES (TA = 25 °C)  
NE85635  
NE85634  
FORWARD INSERTION GAIN  
AND MAXIMUM AVAILABLE GAIN  
vs. FREQUENCY  
FORWARD INSERTION GAIN  
AND MAXIMUM AVAILABLE GAIN  
vs. FREQUENCY  
25  
25  
V
CE = 10 V  
V
CE = 10 V  
I
C = 20 mA  
I
C = 20 mA  
20  
15  
10  
5
20  
15  
MAG  
MAG  
2
|S21E  
|
10  
5
2
|S21E  
|
0
-5  
0
0.1  
0.2 0.3 0.5  
1
2
5
10  
0.1  
0.2  
0.3  
0.5 0.7 1.0  
2.0  
Frequency, f (GHz)  
Frequency, f (GHz)  
NE85632 AND NE85634  
INTERMODULATION DISTORTION  
vs. COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
-80  
-70  
10  
NE85633  
NE85635  
V
CE = 10 V  
7
5
IM3  
V
V
R
CE = 10 V  
= 100 dBμV/50 Ω  
= R = 50 Ω  
NE85632  
NE85634  
O
G
L
-60  
-50  
IM2  
3
2
-40  
-30  
IM  
IM  
2
3
f = 90 + 100 MHz  
f = 2  
X
200-190 MHz  
1
20  
30  
40  
50  
60  
70  
1
2
3
5
7
10  
20 30  
50 70 100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NE85635  
INSERTION GAIN vs.  
COLLECTOR CURRENT  
INSERTION GAIN vs.  
COLLECTOR CURRENT  
24  
16  
VCE = 10 V  
V
CE = 10 V  
f = 500 MHz  
f = 1 GHz  
20  
16  
12  
14  
12  
f = 1 GHz  
f = 2 GHz  
NE85633  
NE85632  
NE85634  
10  
8
8
6
4
4
0
1
2
3
5
7
10  
20 30  
50 70 100  
1
2
5
10  
20  
50  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
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