NE856 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE85600
00 (CHIP)
NE85618
2SC5011
18
NE85619
2SC5006
19
NE85630
2SC4226
30
NE85632
2SC3355
32
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at
VCE = 10 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
GHz
GHz
7.0
6.5
6.5
1.4
3.0 4.5
4.5
NF
Noise Figure at
VCE = 10 V, IC = 7 mA,f = 1 GHz
VCE = 10 V, IC = 7 mA,f = 2 GHz
dB
dB
1.1
2.1
1.4
2.1
1.4
2.2
1.3
2.2
GA
|S21E|2
hFE
Associated Gain at
VCE = 10 V, IC = 7 mA,f = 1 GHz
f = 2 GHz
dB
dB
13
7
12.5
6.5
12
6
10
9.5
10
9
Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz
f = 2 GHz
Forward Current Gain2 at
VCE = 10 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
dB
dB
11
13
7
12
12
6
7
50 120 300 50 120 300
50 120 300
80 120 160 40 110 250
ICBO
IEBO
Cre
Collector Cutoff Current
at VCB = 15 V, IE = 0 mA
μA
μA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
Feedback Capacitance3 at
VCB = 3 V, IE = 0 mA, f = 1 MHz
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
pF
0.7 1.5
0.7 1.5
0.5 1.0
700
0.5 0.9
150
0.65 1.0
600
PT
Total Power Dissipation
Thermal Resistance (J-A)
mW
100
150
833
RTH (J-A)
°C/W
833
1000
210
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE85633
2SC3356
33
NE85634
2SC3357
34
NE85635
2SC3603
35
NE85639/39R
2SC4093
39
SYMBOLS PARAMETERS AND CONDITIONS
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at
VCE = 10 V, IC = 20 mA
GHz
7.0
1.4
6.5
1.4
7.0
2.1
10
9.0
1.5
NF
Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz
dB
dB
2.0
2.1
f = 2 GHz
3.4
GA
Associated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
dB
dB
9
13.5
8.5
|S21E|2
Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz
f = 2 GHz
dB
dB
11.5
9.5
13
7
7
9
hFE
ICBO
IEBO
Forward Current Gain2 at
VCE = 10 V, IC = 20 mA
50
120 300
1.0
50
120 300
1.0
50
120 300
1.0
50
120 300
1.0
Collector Cutoff Current
at VCB = 15 V, IE = 0
mA
μA
μA
Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
1.0
1.0
1.0
1.0
Cre
Feedback Capacitance3 at
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.55 1.0
200
0.65 1.0
20004
0.5
1.0
580
590
0.5
0.9
200
500
PT
Total Power Dissipation
mW
RTH (J-A)
Thermal Resistance (J to A)
°C/W
625
62.54
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width ≤ 350 μs, duty cycle ≤ 2% pulsed.
3. Cre measurement employs a three terminal capacitance bridge incorporating a
guard circuit. The emitter terminal shall be connected to the guard terminal.
2
4. With 2.5 cm x 0.7 mm ceramic substrate (infinite heatsink).
CEL [ CALIFORNIA EASTERN LABS ]
