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NE3511S02-T1D-A 参数 Datasheet PDF下载

NE3511S02-T1D-A图片预览
型号: NE3511S02-T1D-A
PDF下载: 下载PDF文件 查看货源
内容描述: X到Ku波段超低噪声放大器N沟道HJ -FET [X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET]
分类和应用: 晶体放大器晶体管ISM频段
文件页数/大小: 10 页 / 284 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE3511S02  
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
250  
200  
150  
100  
50  
100  
80  
60  
40  
20  
Mounted on Glass Epoxy PCB  
(1.08 cm2 × 1.0 mm (t) )  
V
GS = 0 V  
0.2 V  
0.4 V  
0.6 V  
0
50  
100  
150  
200  
(˚C)  
250  
0
1.0  
Drain to Source Voltage VDS (V)  
2.0  
Ambient Temperature T  
A
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
80  
60  
V
DS = 2 V  
40  
20  
0
–2.0  
–1.0  
Gate to Source Voltage VGS (V)  
0
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. FREQUENCY  
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. DRAIN CURRENT  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
16  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
25  
20  
15  
10  
f = 12 GHz  
V
DS = 2 V  
V
DS = 2 V  
ID = 10 mA  
G
a
G
a
6
NFmin  
4
NFmin  
5
0
2
0.2  
0.0  
0
25  
0
2
4
6
8
10 12 14 16 18 20  
0
5
10  
15  
20  
Frequency f (GHz)  
Drain Current I  
D
(mA)  
Remark The graphs indicate nominal characteristics.  
3
Data Sheet PG10642EJ01V0DS