HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3511S02
X TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
•
Super low noise figure and high associated gain
NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
Micro-X plastic (S02) package
•
APPLICATIONS
•
•
X to Ku-band DBS LNB
Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
B
Supplying Form
NE3511S02-T1C NE3511S02-T1C-A S02 (Pb-Free) 2 kpcs/reel
NE3511S02-T1D NE3511S02-T1D-A 10 kpcs/reel
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3511S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
Unit
4
−3
V
V
IDSS
mA
µA
mW
°C
Gate Current
IG
100
Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Ptot
165
Tch
+125
−65 to +125
Tstg
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10642EJ01V0DS (1st edition)
Date Published October 2006 NS CP(N)
2006
CEL [ CALIFORNIA EASTERN LABS ]
