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NE3511S02-T1D-A 参数 Datasheet PDF下载

NE3511S02-T1D-A图片预览
型号: NE3511S02-T1D-A
PDF下载: 下载PDF文件 查看货源
内容描述: X到Ku波段超低噪声放大器N沟道HJ -FET [X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET]
分类和应用: 晶体放大器晶体管ISM频段
文件页数/大小: 10 页 / 284 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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HETERO JUNCTION FIELD EFFECT TRANSISTOR  
NE3511S02  
X TO Ku BAND SUPER LOW NOISE AMPLIFIER  
N-CHANNEL HJ-FET  
FEATURES  
Super low noise figure and high associated gain  
NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz  
Micro-X plastic (S02) package  
APPLICATIONS  
X to Ku-band DBS LNB  
Other X to Ku-band communication systems  
ORDERING INFORMATION  
Part Number  
Order Number  
Package  
Quantity  
Marking  
B
Supplying Form  
NE3511S02-T1C NE3511S02-T1C-A S02 (Pb-Free) 2 kpcs/reel  
NE3511S02-T1D NE3511S02-T1D-A 10 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 4 (Gate) faces the perforation side  
of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: NE3511S02-A  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
Symbol  
VDS  
VGS  
ID  
Ratings  
Unit  
4
3  
V
V
IDSS  
mA  
µA  
mW  
°C  
Gate Current  
IG  
100  
Note  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
Ptot  
165  
Tch  
+125  
65 to +125  
Tstg  
°C  
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
Document No. PG10642EJ01V0DS (1st edition)  
Date Published October 2006 NS CP(N)  
2006