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NE350184C-T1 参数 Datasheet PDF下载

NE350184C-T1图片预览
型号: NE350184C-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 异质结型场效应晶体管K- BAND超低噪声放大器N沟道HJ -FET [HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET]
分类和应用: 晶体放大器晶体管场效应晶体管
文件页数/大小: 8 页 / 265 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE350184C-T1的Datasheet PDF文件第1页浏览型号NE350184C-T1的Datasheet PDF文件第2页浏览型号NE350184C-T1的Datasheet PDF文件第4页浏览型号NE350184C-T1的Datasheet PDF文件第5页浏览型号NE350184C-T1的Datasheet PDF文件第6页浏览型号NE350184C-T1的Datasheet PDF文件第7页浏览型号NE350184C-T1的Datasheet PDF文件第8页  
NE350184C  
TYPICAL CHARACTERISTICS (TA = +25°C)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
250  
100  
80  
60  
40  
20  
Mounted on Glass Epoxy PCB  
(1.08 cm2 × 1.0 mm (t) )  
200  
150  
100  
50  
V
GS = 0 V  
0.2 V  
0.4 V  
0.6 V  
0
50  
100  
150  
200  
(˚C)  
250  
0
1.0  
Drain to Source Voltage VDS (V)  
2.0  
Ambient Temperature T  
A
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
80  
60  
V
DS = 2 V  
40  
20  
0
–2.0  
–1.0  
Gate to Source Voltage VGS (V)  
0
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. FREQUENCY  
MINIMUM NOISE FIGURE,  
ASSOCIATED GAIN vs. DRAIN CURRENT  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
25  
20  
15  
10  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
20  
18  
16  
14  
12  
10  
8
V
DS = 2 V  
f = 20 GHz  
V
DS = 2 V  
ID = 10 mA  
G
a
G
a
NFmin  
6
NFmin  
5
0
4
0.2  
0.0  
0.2  
0.0  
2
0
30  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
Frequency f (GHz)  
Drain Current I  
D
(mA)  
Remark The graphs indicate nominal characteristics.  
3
Data Sheet PG10584EJ01V0S