HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
•
Super low noise figure and high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
Micro-X ceramic (84C) package
•
APPLICATIONS
•
•
20 GHz-band DBS LNB
Other K-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
1 kpcs/reel
5 kpcs/reel
Marking
A
Supplying Form
NE350184C-T1
NE350184C-T1-A
84C (Pb-Free)
• 12 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE350184C-T1A NE350184C-T1A-A
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE350184C
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
Unit
4
−3
V
V
IDSS
mA
µA
mW
°C
Gate Current
IG
80
Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Ptot
165
Tch
+150
−65 to +150
Tstg
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10584EJ01V0DS (1st edition)
Date Published November 2005 CP(K)
CEL [ CALIFORNIA EASTERN LABS ]
