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CAT93C86ZD4E-1.8TE13 参数 Datasheet PDF下载

CAT93C86ZD4E-1.8TE13图片预览
型号: CAT93C86ZD4E-1.8TE13
PDF下载: 下载PDF文件 查看货源
内容描述: 16K位Microwire串行EEPROM [16K-Bit Microwire Serial EEPROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 9 页 / 410 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT93C86  
(1)(2)  
POWER-UP TIMING  
Symbol  
tPUR  
Parameter  
Max  
1
Units  
ms  
Power-up to Read Operation  
Power-up to Write Operation  
tPUW  
1
ms  
A.C. TEST CONDITIONS  
Input Rise and Fall Times  
Input Pulse Voltages  
Timing Reference Voltages  
Input Pulse Voltages  
Timing Reference Voltages  
NOTE:  
50ns  
0.4V to 2.4V  
0.8V, 2.0V  
0.2VCC to 0.7VCC  
0.5VCC  
4.5V VCC 5.5V  
4.5V VCC 5.5V  
1.8V VCC 4.5V  
1.8V VCC 4.5V  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) and t are the delays required from the time V is stable until the specified operation can be initiated.  
t
PUR  
PUW  
CC  
(3) The input levels and timing reference points are shown in AC Test Conditionstable.  
DEVICE OPERATION  
The CAT93C86 is a 16,384-bit nonvolatile memory  
intended for use with industry standard microproces-  
sors. The CAT93C86 can be organized as either regis-  
ters of 16 bits or 8 bits. When organized as X16, seven  
13-bit instructions control the reading, writing and erase  
operations of the device. When organized as X8, seven  
14-bit instructions control the reading, writing and erase  
operations of the device. The CAT93C86 operates on  
a single power supply and will generate on chip, the high  
voltage required during any write operation.  
Enabled mode. For Write Enable and Write Disable  
instruction PE=don’t care.  
Read  
Upon receiving a READ command and an address  
(clockedintotheDIpin),theDOpinoftheCAT93C86will  
come out of the high impedance state and, after sending  
an initial dummy zero bit, will begin shifting out the data  
addressed(MSBfirst). Theoutputdatabitswilltoggleon  
the rising edge of the SK clock and are stable after the  
specified time delay (tPD0 or tPD1).  
Instructions, addresses, and write data are clocked into  
the DI pin on the rising edge of the clock (SK). The DO  
pin is normally in a high impedance state except when  
reading data from the device, or when checking the  
ready/busy status after a write operation.  
After the initial data word has been shifted out and CS  
remains asserted with the SK clock continuing to toggle,  
thedevicewillautomaticallyincrementtothenextaddress  
and shift out the next data word in a sequential READ  
mode. As long as CS is continuously asserted and SK  
continues to toggle, the device will keep incrementing to  
the next address automatically until it reaches to the end  
of the address space, then loops back to address 0. In  
the sequential READ mode, only the initial data word is  
preceeded by a dummy zero bit. All subsequent data  
words will follow without a dummy zero bit.  
The ready/busy status can be determined after the start  
ofawriteoperationbyselectingthedevice(CShigh)and  
polling the DO pin; DO low indicates that the write  
operation is not completed, while DO high indicates that  
the device is ready for the next instruction. If necessary,  
the DO pin may be placed back into a high impedance  
state during chip select by shifting a dummy 1into the  
DIpin. TheDOpinwillenterthehighimpedancestateon  
the falling edge of the clock (SK). Placing the DO pin into  
the high impedance state is recommended in applica-  
tions where the DI pin and the DO pin are to be tied  
together to form a common DI/O pin.  
Write  
After receiving a WRITE command, address and the  
data, the CS (Chip Select) pin must be deselected for a  
minimum of tCSMIN. The falling edge of CS will start the  
self clocking clear and data store cycle of the memory  
location specified in the instruction. The clocking of the  
SK pin is not necessary after the device has entered the  
self clocking mode. The ready/busy status of the  
CAT93C86 can be determined by selecting the device  
and polling the DO pin. Since this device features Auto-  
Clear before write, it is NOT necessary to erase a  
memory location before it is written into.  
The format for all instructions sent to the device is a  
logical "1" start bit, a 2-bit (or 4-bit) opcode, 10-bit  
address (an additional bit when organized X8) and for  
write operations a 16-bit data field (8-bit for X8  
organizations).  
Note: TheWrite,Erase,WriteallandEraseallinstructions  
require PE=1. If PE is left floating, 93C86 is in Program  
Doc. No. 1091, Rev. M  
4
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