PRELIMINARY
CM3121
ELECTRICAL OPERATING CHARACTERISTICS (CONT’D)
(SEE NOTE1)
V
TT
Regulator Parameters
V
TT
V
TT REF
V
TT LD
V
TT LINE
e
N TT
I
TT LIM
I
TT SC
Output Voltage Range
Output Voltage Range
Load Regulation
Line Regulation
Output Noise Voltage
Current Limit
Short Circuit Current
V
TT
< 0.3V
V
DDQ
= 2.5V, I
TT
= 0.01A,
V
DDQ
= 2.500V, I
TT
= 0.01A
T
A
= 25°C, V
DDQ
= 2.5V,
0.01A
≤
I
TT
≤
±0.5A
T
A
= 25°C, I
TT
= 0.01A,
1.20
1.225
-1.0
-1.0
1.25
1.250
-
-
51
0.6
0.8
0.3
1.30
1.275
1.0
1.0
V
V
%
%
µVrms
A
A
2.8V
≤
V
CC
≤
3.6V, Note 2
BW = 10Hz - 100kHz, C
TT
= 10µF
Note 1: All parameters specified at T
A
= -40°C to +85°C unless otherwise noted.
Note 2: Note that the I
DDQ
current specified is the load current output from the V
DDQ
pin. V
DDQ
also supplies current internally to the
V
TT
regulator when it is sourcing current. The maximum source current can be up to 0.5A. So the maximum total current
from the V
DDQ
regulator is the external V
DDQ
current I
DDQ
added to the maximum V
TT
sourcing current I
TT
. All load currents
are specified as such, but the V
DDQ
current limit is specified at a current just above the total maximum current.
DDR-II Specifications
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL
T
OVER
T
HYST
I
CCN
I
CCQ
V
IH
V
IL
UVLO
t
RISE
PARAMETER
Shutdown Junction Temperature
Junction Temp Hysterisis
Normal Mode V
CC
Supply
Current
Shutdown Mode V
CC
Supply
Current
EN_DDR Input High Threshold
EN_DDR Input Low Threshold
Under Voltage Lock-Out
V
DDQ
Rise TIme
IC in shutdown
EN_DDR = logic "0",
EN_DDR = logic "1",
V
DDQ
= 0V, V
TT
= 0V
V
CC
=3.3V
V
CC
=3.3V
I
DDQ
= 10mA
V
CC
= 3.3V, C
DDQ
= 10µF
0.5
2.0
0.4
1.8
CONDITIONS
General Parameters
-
-
150
25
700
2
-
-
1100
10
°C
°C
µA
µA
V
V
V
ms
(SEE NOTE 3)
MIN
TYP
MAX
UNITS
©
2004 California Micro Devices Corp. All rights reserved.
11/12/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
5
CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
