PRELIMINARY
CM3121
Specifications (cont’d)
DDR-I Specifications
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL
T
OVER
T
HYST
I
CCN
I
CCQ
V
IH
V
IL
UVLO
t
RISE
V
CC MIN
V
DDQ DEF
V
DDQ ADJ
V
DDQ LD
V
DDQ LINE
e
N DDQ
I
DDQ LIM
I
DDQ SC
PARAMETER
Shutdown Junction Temperature
Junction Temp Hysterisis
Normal Mode V
CC
Supply
Current
Shutdown Mode V
CC
Supply
Current
EN_DDR Input High Threshold
EN_DDR Input Low Threshold
Under Voltage Lock-Out
V
DDQ
Rise TIme
Input Voltage
Default Output Voltage Range
Adjustable Output Voltage
Range
Load Regulation
Line Regulation
Output Noise Voltage
Current Limit
Short Circuit Current
IC in shutdown
EN_DDR = logic "0",
EN_CORE =logic "0"
EN_DDR = logic "1",
V
DDQ
= 0V, V
TT
= 0V
V
CC
=3.3V
V
CC
=3.3V
I
DDQ
= 10mA
V
CC
= 3.3V, C
DDQ
= 10µF
V
DDQ
= 2.5V, I
DDQ
= 1.5A,
SENSE_V
DDQ
= 0V, Note 2
I
DDQ
= 0.01A, 2.8V
≤
V
CC
≤
3.6V,
SENSE_V
DDQ
= 0V, Note 2
V
CC
= 3.6V, SENSE_V
DDQ
tied to
external resistors R1 and R2, Note 2
T
A
= 25°C, V
CC
= 3.3V,
0.01A
≤
I
DDQ
≤
1.0A, Note 2
-1.0
-
49
1.7
2.0
0.5
1.0
%
µVrms
A
A
2.8V
≤
V
CC
≤
3.6V, Note 2
BW = 10Hz - 100kHz, C
DDQ
= 10µF
Note 2
V
DDQ
< 0.3V
2.80
2.45
1.6
-
-
2.50
2.55
2.8
2.5
0.5
2.0
0.4
1.8
CONDITIONS
General Parameters
-
-
150
25
700
2
-
-
1100
10
°C
°C
µA
µA
V
V
V
ms
(SEE NOTE1)
MIN
TYP
MAX
UNITS
V
DDQ
Regulator Parameters
V
V
V
%
T
A
= 25°C, I
DDQ
= 0.01A,
©
2004 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
11/12/04