PRELIMINARY
CM2031
(SEE NOTE 1)
ELECTRICAL OPERATING CHARACTERISTICS
VESD
VESD
VCL
ESD Withstand Voltage (IEC) Pins 4, 7, 10, 13, 20, 21, 22, 23, 24,
27, 30, 33; Notes 2 and 3
kV
kV
8
2
ESD Withstand Voltage
(HBM)
Pins 1, 2, 16, 17, 18, 19, 37, 38;
Notes 2 and 4
Channel Clamp Voltage
Positive Transients
TA=25°C, IPP = 1A, tP = 8/20uS;
Notes 2 & 6
11.0
-2.0
V
V
Negative Transients
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20uS
Any I/O pin to Ground; Note 6
1.4
0.9
Ω
Ω
ILEAK
TMDS Channel Leakage Cur• TA = 25°C, Note 2
rent
1
μA
0.01
0.9
C
IN, TMDS
TMDS Channel Input
Capacitance
5V_SUPPLY= 5.0V,
Measured at 1MHz,
VBIAS=2.5V, Note 2
1.2
pF
TMDS Channel Input
Capacitance Matching
5V_SUPPLY= 5.0V,
Measured at 1MHz,
VBIAS=2.5V, Note 2, 5
0.05
0.07
10
pF
pF
pF
ΔCIN, TMDS
CMUTUAL
Mutual Capacitance between
signal pin and adjacent signal- Measured at 1MHz,
pin
5V_SUPPLY= 0V,
VBIAS=2.5V, Note 2
CIN, DDC
Level Shifting Input Capaci•
tance, Capacitance to GND
5V_SUPPLY= 0V,
Measured at 100KHz,
VBIAS=2.5V, Note 2
CIN, CEC
Level Shifting Input Capaci•
tance, Capacitance to GND
5V_SUPPLY= 0V,
Measured at 100KHz,
VBIAS=1.65V, Note 2
10
10
pF
pF
CIN, HP
Level Shifting Input Capaci•
tance, Capacitance to GND
5V_SUPPLY= 0V,
Measured at 100KHz,
VBIAS=2.5V, Note 2
Note 1: Operating Characteristics are over Standard Operating Conditions unless otherwise specified.
Note 2: This parameter is guaranteed by design and verified by device characterization.
Note 3: Standard IEC61000-4-2, CDISCHARGE=150pF, RDISCHARGE=330Ω, 5V_SUPPLY=5V, 3.3V_SUPPLY=3.3V,
LV_SUPPLY=3.3V, GND=0V.
Note 4: Human Body Model per MIL-STD-883, Method 3015, CDISCHARGE=100pF, RDISCHARGE=1.5kΩ, 5V_SUPPLY=5V,
3.3V_SUPPLY=3.3V, LV_SUPPLY=3.3V, GND=0V.
Note 5: Intra-pair matching, each TMDS pair (i.e. D+, D-)
Note 6: These measurements performed with no external capacitor on VP (VP floating)
Note 7: These static measurements do not include AC activity on controlled I/O lines
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8/8/2006