PRELIMINARY
CM1450
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
RATING
-65 to +150
100
500
UNITS
°C
mW
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
(NOTE 1)
SYMBOL
L
TOT
L
1
, L
2
C
TOT
PARAMETER
Total Channel Inductance (L
1
+ L
2
)
Inductance
Total Channel Capcitance (C
1
⏐⏐
C
2
⏐⏐
C
3
)
At 2.5V DC, 1MHz,
30mV AC
At 2.5V DC, 1MHz,
30mV AC
36
12
CONDITIONS
MIN
TYP
34
17
45
15
54
18
MAX
UNITS
nH
nH
pF
pF
C
1
, C
2
, C
3
Capacitance
f
C
f
C
V
DIODE
I
LEAK
V
SIG
Cut-off Frequency
Z
SOURCE
=50Ω, Z
LOAD
=50Ω
Roll-off Frequency at -10dB Attenuation
Z
SOURCE
=50Ω, Z
LOAD
=50Ω
Diode Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
I
DIODE
=10µA
V
DIODE
=+3.3V
I
LOAD
= 10mA
5.6
-1.5
±30
±15
Notes 2,3,4 and 5
5.5
137
300
100
6.8
-0.8
9.0
-0.4
MHz
MHz
V
nA
V
V
kV
kV
V
ESD
Notes 2,4 and 5
V
CL
+12
-7
V
V
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1,
then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open
Note 5: These parameters are guaranteed by design and characterization.
©
2005 California Micro Devices Corp. All rights reserved.
01/27/05
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
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