CM1209
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
I
P
V
F
V
ZBD
I
LEAK
C
IN
PARAMETER
Supply Current
ESD Diode Forward Voltage
Zener Clamp Reverse Breakdown
Voltage
Channel Leakage Current
Channel Input Capacitance
CONDITIONS
(V
P
-V
N
)=5.5V; T
A
=25°C
I
F
= 20mA; T
A
=25°C
At 1mA; T
A
=25°C
T
A
=25°C
At 1 MHz, V
P
=5V, via 10K;
V
N
=0V, V
IN
=2.5V;
Notes 2 and 6
0.65
7
+0.1
6
+1.0
8
MIN
TYP
MAX
10
0.95
UNITS
µA
V
V
µA
pF
V
ESD
ESD Protection
Peak Discharge Voltage at any
channel input and V
P
rail
Contact discharge per
IEC 61000-4-2 standard
Air discharge per
IEC 61000-4-2 standard
Channel Clamp Voltage
Positive Transients
Negative Transients
Notes 2, 3, 5, and 6
Notes 2, 3, 5, and 6
At 8kV ESD HBM;
T
A
=25°C; Notes 2, 4 and 6
+
15
15
+
kV
kV
V
CL
+12.5
- 5.1
I = 1A; T
A
=25°C; See
Figure 2; Note 6 applies
I = 1A; T
A
=25°C; See
Figure 2; Note 6 applies
0.70
0.45
V
V
Ω
Ω
Z
POS
Z
NEG
Dynamic Resistance of Channel Input
for Positive Transients
Dynamic Resistance of Channel Input
for Negative Transients
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
All parameters specified at T
A
=-40 to +85°C unless otherwise noted.
These parameters guaranteed by design and characterization.
From I/O pins to V
P
or V
N
only.
Human Body Model per MIL-STD-883, Method 3015, C
Discharge
= 100pF, R
Discharge
= 1.5KΩ, V
P
= 5.0V, V
N
grounded.
Standard IEC 61000-4-2 with C
Discharge
= 150pF, R
Discharge
= 330Ω V
P
= 5.0V, V
N
grounded.
,
These measurements performed with no external capacitor on V
P
..
© 2004 California Micro Devices Corp. All rights reserved.
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430 N. McCarthy Blvd., Milpitas, CA 95035-5112
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Tel: 408.263.3214
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Fax: 408.263.7846
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www.calmicro.com
01/09/04