BS62LV2008
BSI
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
NAME
Guaranteed Input Low
Voltage(3)
Vcc=5.0V
Vcc=5.0V
IL
V
-0.5
--
0.8
V
Guaranteed Input High
IH
V
cc+0.3
1
2.2
--
--
--
V
V
Voltage(3)
IL
IN
I
Input Leakage Current
Output Leakage Current
Vcc = Max, V = 0V to Vcc
uA
Vcc = Max, CE1= VIH, CE2= VIL, or
OE = VIH, VI/O = 0V to Vcc
LO
OL
I
--
--
1
uA
Vcc=5.0V
Vcc=5.0V
V
V
Output Low Voltage
Output High Voltage
Vcc = Max, I = 2.0mA
OL
--
--
--
0.4
--
V
V
OH
OH
Vcc = Min, I = -1.0mA
2.4
70ns
55ns
45
55
Operating Power Supply CE1 = VIL, CE2 = VIH
Current
,
(5)
CC
5.0 V
I
I
I
--
--
--
--
--
mA
mA
uA
I
DQ = 0mA, F = Fmax(2)
CE1 = VIH, or CE2 = VIL
DQ = 0mA,
,
Vcc=5.0V
CCSB
Standby Current-TTL
1.0
30
I
CE1≧Vcc-0.2V or CE2≦0.2V,
VIN≧Vcc-0.2V or VIN≦0.2V
(4)
Vcc=5.0V
CCSB1
Standby Current-CMOS
1.0
1. Typical characteristics are at TA = 25oC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. IccsB1 _Max. is 10uA at Vcc=5.0V and TA=70oC. 5. Icc_Max. is 53mA(@55ns) /43mA(@70ns) at Vcc=5.0V and TA=0~70oC.
2. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(3)
ICCDR
Data Retention Current
--
0
0.1
1.0
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.7uA at TA=70oC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
DR ≥ 1.5V
V
Vcc
Vcc
Vcc
CE1
t
R
t
CDR
≥
CE1 Vcc - 0.2V
VIH
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
DR ≧ 1.5V
V
Vcc
Vcc
Vcc
t
R
t
CDR
CE2 ≦ 0.2V
VIL
VIL
CE2
Revision 1.1
R0201-BS62LV2008
3
Jan.
2004