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BS62LV2008STC-70 参数 Datasheet PDF下载

BS62LV2008STC-70图片预览
型号: BS62LV2008STC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 256K ×8位 [Very Low Power/Voltage CMOS SRAM 256K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 319 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BS62LV2008  
BSI  
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )  
PARAMETER  
UNITS  
PARAMETER  
TEST CONDITIONS  
MIN. TYP. (1) MAX.  
NAME  
Guaranteed Input Low  
Voltage(3)  
Vcc=5.0V  
Vcc=5.0V  
IL  
V
-0.5  
--  
0.8  
V
Guaranteed Input High  
IH  
V
cc+0.3  
1
2.2  
--  
--  
--  
V
V
Voltage(3)  
IL  
IN  
I
Input Leakage Current  
Output Leakage Current  
Vcc = Max, V = 0V to Vcc  
uA  
Vcc = Max, CE1= VIH, CE2= VIL, or  
OE = VIH, VI/O = 0V to Vcc  
LO  
OL  
I
--  
--  
1
uA  
Vcc=5.0V  
Vcc=5.0V  
V
V
Output Low Voltage  
Output High Voltage  
Vcc = Max, I = 2.0mA  
OL  
--  
--  
--  
0.4  
--  
V
V
OH  
OH  
Vcc = Min, I = -1.0mA  
2.4  
70ns  
55ns  
45  
55  
Operating Power Supply CE1 = VIL, CE2 = VIH  
Current  
,
(5)  
CC  
5.0 V  
I
I
I
--  
--  
--  
--  
--  
mA  
mA  
uA  
I
DQ = 0mA, F = Fmax(2)  
CE1 = VIH, or CE2 = VIL  
DQ = 0mA,  
,
Vcc=5.0V  
CCSB  
Standby Current-TTL  
1.0  
30  
I
CE1Vcc-0.2V or CE20.2V,  
VINVcc-0.2V or VIN0.2V  
(4)  
Vcc=5.0V  
CCSB1  
Standby Current-CMOS  
1.0  
1. Typical characteristics are at TA = 25oC.  
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.  
4. IccsB1 _Max. is 10uA at Vcc=5.0V and TA=70oC. 5. Icc_Max. is 53mA(@55ns) /43mA(@70ns) at Vcc=5.0V and TA=0~70oC.  
2. Fmax = 1/tRC .  
„ DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
MIN.  
TYP. (1)  
MAX.  
UNITS  
CE1 Vcc - 0.2V or CE2 0.2V,  
VIN Vcc - 0.2V or VIN 0.2V  
VDR  
Vcc for Data Retention  
1.5  
--  
--  
V
CE1 Vcc - 0.2V or CE2 0.2V,  
VIN Vcc - 0.2V or VIN 0.2V  
(3)  
ICCDR  
Data Retention Current  
--  
0
0.1  
1.0  
uA  
Chip Deselect to Data  
Retention Time  
tCDR  
tR  
--  
--  
--  
--  
ns  
ns  
See Retention Waveform  
(2)  
Operation Recovery Time  
TRC  
1. Vcc = 1.5V, TA = + 25OC  
2. tRC = Read Cycle Time  
3. IccDR_MAX. is 0.7uA at TA=70oC.  
„ LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )  
Data Retention Mode  
DR 1.5V  
V
Vcc  
Vcc  
Vcc  
CE1  
t
R
t
CDR  
CE1 Vcc - 0.2V  
VIH  
VIH  
„ LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )  
Data Retention Mode  
DR 1.5V  
V
Vcc  
Vcc  
Vcc  
t
R
t
CDR  
CE2 0.2V  
VIL  
VIL  
CE2  
Revision 1.1  
R0201-BS62LV2008  
3
Jan.  
2004