BH62UV1601
DC ELECTRICAL CHARACTERISTICS (T
A
= -40
O
C to +85
O
C)
PARAMETER
NAME
V
CC
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
I
CC1
I
CCSB
I
CCSB1
PARAMETER
Power Supply
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current – TTL
Standby Current – CMOS
O
TEST CONDITIONS
MIN.
1.65
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
TYP.
(1)
--
--
--
--
--
--
--
6
8
1.0
1.5
--
5.0
5.0
(5)
MAX.
3.6
0.4
0.8
V
CC
+0.3
1
1
0.2
0.4
--
8
12
1.5
2.0
0.5
1.0
25
30
(3)
UNITS
V
V
V
uA
uA
V
V
mA
mA
mA
uA
-0.3
(2)
1.4
2.2
--
--
V
IN
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
V
I/O
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
or OE = V
IH
V
CC
= Max, I
OL
= 0.1mA
V
CC
= Max, I
OL
= 2.0mA
V
CC
= Min, I
OH
= -0.1mA
V
CC
= Min, I
OH
= -1.0mA
CE1 = V
IL
, CE2 = V
IH
,
I
DQ
= 0mA, f = F
MAX
(4)
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
--
V
CC
-0.2
2.4
--
--
--
--
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = 1MHz
CE1 = V
IH
, or CE2 = V
IL
,
I
DQ
= 0mA
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
1. Typical characteristics are at T
A
=25 C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
RC.
O
5. at V
CC
=3.0V at T
A
=25 C.
DATA RETENTION CHARACTERISTICS (T
A
= -40
O
C to +85
O
C)
SYMBOL
V
DR
I
CCDR
t
CDR
t
R
PARAMETER
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
O
TEST CONDITIONS
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
V
CC
=1.2V
MIN.
1.0
--
0
TYP.
(1)
--
2.5
--
MAX.
--
15
--
--
UNITS
V
uA
ns
ns
See Retention Waveform
t
RC
(2)
--
1. Typical characteristics are at T
A
=25 C and not 100% tested.
2. t
RC
= Read Cycle Time.
LOW V
CC
DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
V
DR
≧1.0V
V
CC
V
CC
V
CC
t
CDR
V
IH
CE1≧V
CC
- 0.2V
t
R
V
IH
CE1
R0201-BH62UV1601
3
Revision
1.2
Oct.,
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
