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TISP8201MDR 参数 Datasheet PDF下载

TISP8201MDR图片预览
型号: TISP8201MDR
PDF下载: 下载PDF文件 查看货源
内容描述: 互补BUFFERED -GATE SCRS用于双极性SLIC过压保护 [COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION]
分类和应用: 电信集成电路电信电路电信保护电路光电二极管
文件页数/大小: 13 页 / 325 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP8200M & TISP8201M
TISP8200M and TISP8201M Voltage Overshoot
Figure 9 shows typical overshoots on a 100 A 2/10 waveshape. Both devices are under 10 V peak, which meets the needs of the SLICs listed
earlier.
Line Protection with TISP8200M and TISP8201M
Figure 10 shows a typical circuit for single line protection using one TISP8200M and one TISP8201M. The series resistor values limit the test
impulse currents to within the protector ratings.
TISP8200M 2/10 OVERSHOOT
20
(I
K
) I
T
= -100 A
V
GA
= -80 V
10
10
AI8XAMA
TISP8201M 2/10 OVERSHOOT
20
(I
A
) I
T
= +100 A
V
GK
= +80 V
AI8XANA
Overshoot Voltage - V
Overshoot Voltage - V
0
0
-10
-10
-20
0
100 200 300 400 500 600 700 800 900 1000
Time - ns
-20
0
100
200
300
400
500
Time - ns
Figure 9. Voltage Overshoot Referenced to Gate Bias Voltage
V
BATR
C2
100 nF
TISP
8200M
0V
R1
RING
GR-1089-CORE
R1 = 15
min. (1
st
& 2
nd
level)
TISP
8201M
SLIC
ITU-T K.20 & K.21
R1 = 10
min for coordination
TIP
R1
V
BATH
C1
100 nF
AI8XAE
0V
Figure 10. Line Protection with TISP8200M and TISP8201M
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.