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TISP61511DR-S 参数 Datasheet PDF下载

TISP61511DR-S图片预览
型号: TISP61511DR-S
PDF下载: 下载PDF文件 查看货源
内容描述: 双正向导电的P- GATE闸流体可编程过电压保护 [DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS]
分类和应用: 电信集成电路电信电路电信保护电路光电二极管
文件页数/大小: 9 页 / 351 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP61511D Gated Protectors
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted) (Continued)
Parameter
I
H
I
GAS
I
GT
V
GT
C
AK
Holding current
Gate reverse current
Gate trigger current
Gate trigger voltage
Anode-cathode off-
state capacitance
Test Conditions
I
T
= 1 A, di/dt = -1A /ms, V
GG
= -48 V
V
GG
= -75 V, K and A terminals connected
I
T
= 3 A, t
p(g)
20
µs,
V
GG
= -48 V
I
T
= 3 A, t
p(g)
20
µs,
V
GG
= -48 V
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 4)
V
D
= -3 V
V
D
= -48 V
T
J
= 25°C
T
J
= 70°C
0.2
Min
150
5
50
5
2.5
100
50
Typ
Max
Unit
mA
µA
µA
mA
V
pF
pF
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
R
θJA
Junctio n to free air thermal resistance
Test Conditions
P
tot
= 0.8 W, T
A
= 25°C
5 cm
2
, FR4 PCB
D Package
Min
Typ
Max
170
Unit
°C/W
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.