TISP61511D Gated Protectors
Absolute Maximum Ratings
Rating
Repetitive peak off-state voltage, V
GK
= 0, -40
°C
≤
T
J
≤
85
°C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40
°C
≤
T
J
≤
85
°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000
µs
5/310
µs
0.2/310
µs
1/20
µs
2/10
µs
Non-repetitive peak on-state curr ent, 50 Hz (see Notes 1 and 2)
full-sine-wave, 20 ms
1s
Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2)
Junction temperatur e
Storage temperature range
I
GSM
T
J
T
stg
I
TSM
5
3.5
2
-55 to +150
-55 to +150
A
°C
°C
A
T
J
= -40
°C
T
J
= 25
°C,
85
°C
I
TSP
30
40
40
90
120
170
A
Symbol
V
DRM
V
GKRM
Value
-100
-85
Unit
V
V
NOTES: 1. Initially the protector must be in thermal equilibrium with -40
°C
≤
T
J
≤
85
°C.
The surge may be repeated after the device returns
to its initial conditions. See the applications section for the details of the impulse generators.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85
°C,
derate linearly to zero at 150
°C
lead temperature.
Recommended Operating Conditions
Component
C
G
Gate decoupling capacitor
Min
Typ
220
Max
Unit
nF
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted)
Parameter
I
D
V
(BO)
V
GK(BO)
Off-state current
Breakover voltage
Gate-cathode voltage
at breakover
On-state voltage
Forward voltage
Peak forward recovery
voltage
V
D
= -85 V, V
GK
= 0
Test Conditions
T
J
= 25
°C
T
J
= 70
°C
Min
Typ
Max
5
50
-58
10
20
25
3
4
3
5
5
7
12
V
V
V
V
Unit
µA
µA
V
I
T
= 30 A, 10/1000
µs,
1 kV, R
S
= 33
Ω,
di/dt
(i)
= 8 A/µs (see Note 3)
I
T
= 30 A, 10/700
µs,
1.5 kV, R
S
= 10
Ω,
di/dt
(i)
= 14 A/µs (see Note 3)
I
T
= 30 A, 1.2/50
µs,
1.5 kV, R
S
= 10
Ω,
di/dt
(i)
= 70 A/µs (see Note 3)
I
T
= 38 A, 2/10
µs,
2.5 kV, R
S
= 61
Ω,
di/dt
(i)
= 40 A/µs (see Note 3)
I
T
= 0.5 A, t
w
= 500
µs
I
T
= 3 A, t
w
= 500
µs
I
F
= 5 A, t
w
= 500
µs
I
F
= 30 A, 10/1000
µs,
1 kV, R
S
= 33
Ω,
di/dt
(i)
= 8 A/µs (see Note 3)
I
T
= 30 A, 10/700
µs,
1.5 kV, R
S
= 10
Ω,
di/dt
(i)
= 14 A/µs (see Note 3)
I
T
= 30 A, 1.2/50
µs,
1.5 kV, R
S
= 10
Ω,
di/dt
(i)
= 70 A/µs (see Note 3)
I
T
= 38 A, 2/10
µs,
2.5 kV, R
S
= 61
Ω,
di/dt
(i)
= 40 A/µs (see Note 3)
V
T
V
F
V
FRM
NOTE
3: All tests have C
G
= 220 nF and V
GG
= -48 V. R
S
is the current limiting resistor between the output of the impulse generator and
the R or T terminal. See the applications section for the details of the impulse generators.
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
