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TISP4070M3BJR-S 参数 Datasheet PDF下载

TISP4070M3BJR-S图片预览
型号: TISP4070M3BJR-S
PDF下载: 下载PDF文件 查看货源
内容描述: 双向晶闸管过电压保护 [BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS]
分类和应用:
文件页数/大小: 15 页 / 388 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP4xxxM3BJ Overvoltage Protector Series
Description (continued)
The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection
devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative
voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000
TISP4xxxH3BJ series is available.
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4360
‘4395
‘4400
Symbol
Value
±
58
±
65
±
75
±
90
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±275
±290
±320
±300
Unit
Repetitive peak off-state voltage, (see Note 1)
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10
µs
(GR-1089-CORE, 2/10
µs
voltage wave shape)
300
8/20
µs
(IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
220
10/160
µs
(FCC Part 68, 10/160
µs
voltage wave shape)
120
5/200
µs
(VDE 0433, 10/700
µs
voltage wave shape)
110
I
TSP
A
0.2/310
µs
(I3124, 0.5/700
µs
voltage wave shape)
100
5/310
µs
(ITU-T K.20/21/45, K.44 10/700
µs
voltage wave shape)
100
5/310
µs
(FTZ R12, 10/700
µs
voltage wave shape)
100
10/560
µs
(FCC Part 68, 10/560
µs
voltage wave shape)
75
10/1000
µs
(GR-1089-CORE, 10/1000
µs
voltage wave shape)
50
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
30
I
TSM
16.7 ms (60 Hz) full sine wave
32
A
1000 s 50 Hz/60 Hz a.c.
2.1
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A
di
T
/dt
300
A/µs
Junction temperature
T
J
-40 to +150
°C
Storage temperature range
T
stg
-65 to +150
°C
NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures.
2. Initially, the TISP4xxxM3BJ must be in thermal equilibrium with T
J
= 25
°C.
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
4. See Applications Information and Figure 12 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25
°
C.
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.