TISP4xxxM3BJ Overvoltage Protector Series
Typical Characteristics
1
0.9
0.8
Capacitance Normal zed to V
D
= 0
i
0.7
0.6
0.5
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC4MABB
T
J
= 25
°C
V
d
= 1 Vrms
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
TCMAEB
40
∆
C - Differential Off-State Capacitance- pF
35
∆
C = C
off(-2 V)
- C
off (-50 V)
30
'4070 THRU '4115
0.4
'4125 THRU '4220
0.3
'4240 THRU '4400
25
0.2
0.5
1
2
3
5
10
20 30
V
D
- Off-state Voltage - V
50
100 150
20
50
60 70 80 90 100
150
200 250 300 350
V
DRM
- Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
TYPICAL CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
TC4XBB
3
|C
off(+VD)
- C
off(-VD)
| — Capacitance Asymmetry — pF
V
d
= 10 mV rms, 1 MHz
2
1
V
d
= 1 V rms, 1 MHz
0
0.5 0.7 1
2
3 4 5
7 10
20 30 4050
V
D
— Off-State Voltage — V
Figure 8.
NOVEMBER 1997 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
