TISP3xxxF3 (HV) Overvoltage Protector Series
Description (continued)
These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control
and are virtually transparent to the system in normal operation.
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Rating
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
Symbol
Value
±180
±200
±220
±240
±270
350
175
90
120
I
PPSM
60
55
38
50
50
45
35
D Package
SL Package
I
TSM
di
T
/dt
T
J
T
stg
4.3
7.1
250
-65 to +150
-65 to +150
A
A/µs
°C
°C
A
Unit
Repetitive peak off-state voltage, 0
°C
< T
A
< 70
°C
V
DRM
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
Ω
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0
°C
< T
A
< 70
°C
(see Notes 1 and 3)
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially, the TISP
®
device m ust be in thermal equilibrium with 0 °C < T
J
<70 °C. The surge may be repeated after the TISP
®
device
returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Electrical Characteristics for R and T Terminal Pair, T
A
= 25 °C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Off-state current
Off-state capacitance
Test Conditions
V
D
=
±2V
DRM
, 0
°C
< T
A
< 70
°C
V
D
=
±50
V
f = 100 kHz, V
d
= 100 mV , V
D
= 0,
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
Min
Typ
Max
±10
±10
D Package
SL Package
0.05
0.03
0.15
0.1
Unit
µA
µA
pF
I
DRM
I
D
C
off
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
